Location:
Search - nand ecc
Search list
Description: This book begins with an overview followed by detailed information on Nand Flash controller software interface, hardware interface, functional operation and core integration.
Platform: |
Size: 1042186 |
Author: peppermint |
Hits:
Description: samsung nand flash k9f series ECC algorithm
Platform: |
Size: 172032 |
Author: |
Hits:
Description: 三星2410的NAND驱动，添加ECC检错。完善后的。-Samsung's NAND-driven 2410, adding ECC Frederick wrong. The perfect.
Platform: |
Size: 37888 |
Author: 陈群 |
Hits:
Description: NAND Flash Controller & ECC VHDL Code-NAND Flash Controller
Platform: |
Size: 22528 |
Author: |
Hits:
Description: ecc 算法实现和纠错
1。nand_trans_result函数是实现ecc的行校验
2。nand_calculate_ecc函数是实现ecc的列校验
3。nand_correct_data函数实现1bit纠错-ecc algorithm and error-correcting one. nand_trans_result function is to achieve parity 2 rows ecc. ecc realize nand_calculate_ecc function is checking out the 3. 1bit error correction function nand_correct_data realize
Platform: |
Size: 1024 |
Author: czhwin99 |
Hits:
Description: nand flash的驱动文件,写的很有条理-nand flash driver files, written in a very structured
Platform: |
Size: 4096 |
Author: lixiang |
Hits:
Description: Samsung NAND Flash (Error Checking & Correction)演算法原理介绍
-Samsung NAND Flash (Error Checking
Platform: |
Size: 30720 |
Author: 趙小豪 |
Hits:
Description: Toshiba NAND Flash ECC(Error Checking & Correction)演算法原理介绍
-Toshiba NAND Flash ECC (Error Checking
Platform: |
Size: 80896 |
Author: 趙小豪 |
Hits:
Description: 三星512b nandflash ecc 算法-Samsung 512b nandflash ecc algorithm
Platform: |
Size: 169984 |
Author: linfy |
Hits:
Description: WINce的ECC算法,和读写函数,可对比MTD NAND ECC来学习-WINCE the ECC algorithm, and to read and write functions, can be compared to learn MTD NAND ECC
Platform: |
Size: 8192 |
Author: 按时地方 |
Hits:
Description: NAND Flash的BCH ECC算法。-NAND Flash of the BCH ECC algorithm.
Platform: |
Size: 105472 |
Author: chencheng |
Hits:
Description: Spanion的关于NAND Flash的ECC算法的简单比较，有兴趣的可以看看。-NAND Flash on Spanion the ECC algorithm is relatively simple, interested can look at.
Platform: |
Size: 83968 |
Author: chencheng |
Hits:
Description: Micron Nand flash Material, including ECC, Nand Command Operation, boot from nand, hamming code. Useful to the nand driver developer.
Platform: |
Size: 1697792 |
Author: Alfred Cheng |
Hits:
Description: NAND flash ECC 256 words
Platform: |
Size: 165888 |
Author: 郑臣鑫 |
Hits:
Description: 完整的控制ｎａｎｄ读写的ｖｈｄｌ程序模块，包含了无缝连接的ｅｃｃ校验程序，非常值得学习借鉴-NAND read and write complete control of the VHDL program modules, including the seamless connection of ecc checking procedures, very worthwhile to learn from
Platform: |
Size: 22528 |
Author: yangyu |
Hits:
Description: 基于nand flash 的bch源代码，采用ｃ语言时间，可以纠扇区内错误。-Nand flash-based source code of the BCH, using c language time, you can correct the error within the sector.
Platform: |
Size: 965632 |
Author: daisy |
Hits:
Description: NAND Flash ECC Algorithm
(Error Checking & Correction)
Platform: |
Size: 30720 |
Author: check_prog |
Hits:
Description: Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read, erase, and
program operations
— Separate VCCQ for 5 volt I/O tolerance
n Automated Program and Erase
— Page program: 512 + 16 bytes
— Block erase: 8 K + 256 bytes
n Block architecture
— 8 Kbyte blocks + 256 byte spare area
(separately erasable, readable, and programmable)
— 512 byte page + 16 byte spare area for ECC and other
system overhead information
n Fast read and program performance (typical values)
— Read: < 7 μs initial, < 50 ns sequential
— Program: 200 μs (full page program at 400 ns/byte)
— Erase: < 2 ms/8 Kbyte block
n Pinout and package
— Industry Standard NAND compatible pinout with 8-bit
I/O bus and control signals
— TSOP-II 44/40 pin package (standard and reverse)
with copper lead frame for higher reliability
— 40-ball FBGA package provides higher reliability-Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read, erase, and
program operations
— Separate VCCQ for 5 volt I/O tolerance
n Automated Program and Erase
— Page program: 512+ 16 bytes
— Block erase: 8 K+ 256 bytes
n Block architecture
— 8 Kbyte blocks+ 256 byte spare area
(separately erasable, readable, and programmable)
— 512 byte page+ 16 byte spare area for ECC and other
system overhead information
n Fast read and program performance (typical values)
— Read: < 7 μs initial, < 50 ns sequential
— Program: 200 μs (full page program at 400 ns/byte)
— Erase: < 2 ms/8 Kbyte block
n Pinout and package
— Industry Standard NAND compatible pinout with 8-bit
I/O bus and control signals
— TSOP-II 44/40 pin package (standard and reverse)
with copper lead frame for higher reliability
— 40-ball FBGA package provides higher reliability
Platform: |
Size: 847872 |
Author: enyou |
Hits:
Description: Samsung NAND flash ECC说明-Samsung NAND flash ECC algorithm introduction
Platform: |
Size: 71680 |
Author: Jack Tsai |
Hits:
Description: nand driver for micro device
Platform: |
Size: 5120 |
Author: astrorainbow |
Hits: